| Part Number | 2SD692 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Darlingtion Power Transistor |
| Description | ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC =1 Adc ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min... |
| Features |
ONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
VCER
Collector-Emitter Breakdown Voltage IC= 50mA ; RBE= 1 kΩ
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA
ICBO
Collector Cutoff current
VCB= 100V; IE=0
...
|
| Datasheet |
 2SD692 Datasheet
|
