| Part Number | 2SD427 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ ·Complement to Type 2SB557 ·Minimum Lot... |
| Features |
X UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
120
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
2.5
V
VBE(on) Base-Emitter On Voltage
IC= ...
|
| Datasheet |
 2SD427 Datasheet
|
