| Part Number | 2SD1606 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 3A ·Minimum Lot-to-Lot variations for robu... |
| Features |
-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 60mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 3A; IB= 6mA
VBE(sat)-2 Base-E...
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| Datasheet |
 2SD1606 Datasheet
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