| Part Number | 2SD1601 |
| Manufacturer | Inchange Semiconductor |
| Title | Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 2A ·Complement to Type 2SB1101 ·Minimum Lot... |
| Features |
RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 2A; IB...
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| Datasheet |
 2SD1601 Datasheet 210.87KB |
