| Part Number | 2SD1576 |
| Manufacturer | Inchange Semiconductor |
| Title | Power Transistor |
| Description | ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1300V (Min.) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations... |
| Features |
YMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 1A
1.5
V
V(BR)EBO Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff C...
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| Datasheet |
 2SD1576 Datasheet
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