| Part Number | 2SCR586D |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)≤0.3V@(IC=2A,IB=100mA) ·Complementary NPN types:2SAR586D ·100% avalanche tested ·Minimum ... |
| Features |
1mA
BVEBO Emitter-Base breakdown voltage
IE=100uA
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 100mA
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= ...
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| Datasheet |
 2SCR586D Datasheet
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