| Part Number | 2SC3479 |
| Manufacturer | Inchange Semiconductor |
| Title | Power Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for rob... |
| Features |
Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.8A
ICBO
Collec...
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| Datasheet |
 2SC3479 Datasheet
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