| Part Number | 2SB955 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation ... |
| Features |
ETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA, RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -200mA, IE= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A, IB= -10mA
VCE(sat)-2 Collector-Emitter Saturation ...
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| Datasheet |
 2SB955 Datasheet
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