| Part Number | 2SB900 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -50V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -2A ·Wide area of safe ... |
| Features |
ER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)CBO Collector-Base breakdown voltage IC=-1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; I...
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| Datasheet |
 2SB900 Datasheet
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