| Part Number | 2SB897 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= -10A ·Low Collector Saturation Voltage- : VCE(sat) = -1.5V(Max.) @IC= 10A ·Complement to Type 2SD121... |
| Features |
e specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA, IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A ,IB= -25mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -10A ,IB= -25mA
ICBO
Collect...
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| Datasheet |
 2SB897 Datasheet
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