Part Number | 2SB1153 |
Manufacturer | Inchange Semiconductor |
Title | Silicon PNP Power Transistors |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -170V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations fo... |
Features |
ltage IC= -10A; IB= -1A
-2.5 V
VBE(on) Base -Emitter On Voltage
IC= -8A; VCE= -5V
-1.8 V
ICBO
Collector Cutoff Current
VCB= -180V; IE=0
-50 μA
IEBO
Emitter Cutoff Current
VEB= -3V; IC=0
-50 μA
hFE-1
DC Current Gain
IC= -20mA; VCE= -5V
...
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Datasheet | 2SB1153 Datasheet |