Part Number | IXZ4DF12N100 |
Manufacturer | IXYS Corporation |
Title | RF Power MOSFET&DRIVER |
Description | The IXZ4DF12N100 is a CMOS high speed high current gate driver and a MOSFET combination specifically designed Class D, E, HF, RF applications at u... |
Features |
• Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability • IXYS advanced Z-MOS process • Low RDS(on) • Very low insertion inductance (<2nH) • No beryllium oxide (BeO) or ... |
Datasheet | IXZ4DF12N100 Datasheet 310.43KB |