| Part Number | IXTC200N10T |
| Manufacturer | IXYS Corporation |
| Title | Power MOSFET |
| Description | TrenchMVTM Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated IXTC200N10T Symbol VDSS VDGR VGSM ID25 I... |
| Features |
Silicon chip on Direct-Copper Bond (DCB) substrate Isolated mounting surface 2500V electrical isolation
Advantages
Easy to mount Space savings High power density
Applications
Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC...
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| Datasheet |
 IXTC200N10T Datasheet 179.86KB |
