Part Number | IXTN120N25 |
Manufacturer | IXYS |
Title | Power MOSFET |
Description | High Current MegaMOSTMFET N-Channel Enhancement Mode Preliminary Data Sheet IXTK 120N25 VDSS ID25 RDS(on) = = = 250 V 120 A 20 mΩ Symbol Test... |
Features |
•Low RDS (on) HDMOSTM process •Rugged polysilicon gate cell structure •Internationalstandardpackage •Fast switching times Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGS... |
Datasheet | IXTN120N25 Datasheet 574.66KB |