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IXTC96N25T

IXYS
Part Number IXTC96N25T
Manufacturer IXYS
Title Power MOSFET
Description Preliminary Technical Information Trench Gate IXTC96N25T Power MOSFET (Electrically Isolated Back Surface) VDSS = ID25 = RDS(on) ≤ 250V 40A ...
Features z Silicon chip on Direct-Copper-Bond substrate z Isolated mounting surface z 2500V electrical isolation z Low drain to tab capacitance (< 30pF) Advantages z Easy assembly z Space savings z High power density Symbol Test Conditions (TJ = 25°C unles...

Datasheet PDF File IXTC96N25T Datasheet 153.02KB

IXTC96N25T   IXTC96N25T   IXTC96N25T  




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