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IXBF55N300

IXYS
Part Number IXBF55N300
Manufacturer IXYS
Title Monolithic Bipolar MOS Transistor
Description High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = IC110 = VCE(sat)  3000V 34A 3.2V (Electrically Isolate...
Features
 Silicon Chip on Direct-Copper Bond (DCB) Substrate
 Isolated Mounting Surface
 4000V~ Electrical Isolation
 High Blocking Voltage
 High Peak Current Capability
 Low Saturation Voltage Advantages
 Low Gate Drive Requirement
 High Power Densit...

Datasheet PDF File IXBF55N300 Datasheet

IXBF55N300   IXBF55N300   IXBF55N300  




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