| Part Number | SPB08P06P |
| Manufacturer | INCHANGE |
| Title | P-Channel MOSFET |
| Description | isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤300mΩ(@VGS= -10V; ID= -6.2A) ·Advanced trench process techn... |
| Features |
·Static drain-source on-resistance: RDS(on)≤300mΩ(@VGS= -10V; ID= -6.2A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching appl... |
| Datasheet |
 SPB08P06P Datasheet
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