| Part Number | NTB082N65S3F |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Drain-source on-resistance: RDS(on) ≤ 82mΩ@10V ·Drain Source Voltage: VDSS= 650V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for r... |
| Features |
emiconductor
NTB082N65S3F
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-Voltage
IS= 20A ;VGS= 0
RDS(on) Drain-Source On-Resistan...
|
| Datasheet |
 NTB082N65S3F Datasheet
|
