| Part Number | NJD35N04T4G |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·With TO-252(DPAK) packaging ·Reliable performance at higher powers ·Designed for inductive loads ·Fast switching speed ·Very low current requirem... |
| Features |
specified
SYMBOL
PARAMETER
CONDITIONS
BVCBO Collector-Base Breakdown Voltage IC=0.1mA; IE=0
BVCEO Collector-Emitter Breakdown Voltage IC=10mA; IB=0
BVEBO Emitter-Base Breakdown Voltage
IE=0.1mA;IC=0
VCE(sat) Collector-Emitter Saturation Volta...
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| Datasheet |
 NJD35N04T4G Datasheet
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