| Part Number | MJB3055 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Minimum Lot-to-Lot variations for robust ... |
| Features |
ETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A
VBE(on) Base-Emitter On Voltage
IC= ...
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| Datasheet |
 MJB3055 Datasheet
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