| Part Number | MJ3001 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC = 5A ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) ... |
| Features |
INCHANGE Semiconductor
isc Silicon NPN Darlingtion Power Transistor
MJ3001
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collec...
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| Datasheet |
 MJ3001 Datasheet
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