logo

MJ2501

INCHANGE
Part Number MJ2501
Manufacturer INCHANGE
Title PNP Transistor
Description ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC = -5A ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min...
Features ECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA VCE(sat)-2 Collector-Emitter...

Datasheet PDF File MJ2501 Datasheet

MJ2501   MJ2501   MJ2501  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map