| Part Number | IRF3708S |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Static drain-source on-resistance: RDS(on) ≤12mΩ@VGS= 10V ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot varia... |
| Features |
X UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250µA
30
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
0.6
2.0
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=15A
12
mΩ
IGSS
Gate-Body Leakage Current
VGS= ±12V;VDS= ...
|
| Datasheet |
 IRF3708S Datasheet
|
