| Part Number | FJP5027 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Wide SOA ·Minimum Lot-to-Lot variations for robust device perfo... |
| Features |
oltage
IE= 1mA; IC= 0
7
V
BVCEO Collector- Emitter Breakdown Voltage IC= 5mA; IB= 0
800
V
BVCBO Collector- Base Breakdown Voltage IC= 1mA; IE= 0
1100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
2.0
V
VBE(sat) Base-...
|
| Datasheet |
 FJP5027 Datasheet
|
