Part Number | FDP2D3N10C |
Manufacturer | INCHANGE |
Title | N-Channel MOSFET |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on)... |
Features |
·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 2.3mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power s... |
Datasheet | FDP2D3N10C Datasheet 278.50KB |