| Part Number | C1969 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·High Power Gain- : Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applicat... |
| Features |
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA, IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
60 25
V V
V(BR)EBO Emitter-Base Breakdown Voltage ICBO Collector Cutoff Current
IE= 5mA, IC= 0...
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| Datasheet |
 C1969 Datasheet
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