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BUH417D

INCHANGE
Part Number BUH417D
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Switching Speed ·High Voltage ·Built-in Integrated Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation...
Features ecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A ;...

Datasheet PDF File BUH417D Datasheet

BUH417D   BUH417D   BUH417D  




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