| Part Number | BD895A |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 4A ·Collector Power Dissipation- : PC= 70W@ ... |
| Features |
nce,Junction to Ambient 62.5 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
BD895A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
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| Datasheet |
 BD895A Datasheet
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