Part Number | BD681 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 100V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A ·Complement to Type BD682 ·Minimum Lot-to-L... |
Features |
STICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 30mA
VBE(on) Base-Emitter On Voltage
IC= 1.5A; VCE= 3V...
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Datasheet | BD681 Datasheet |