logo

BD676

INCHANGE
Part Number BD676
Manufacturer INCHANGE
Title PNP Transistor
Description ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -45 V ·DC Current Gain— : hFE = 750(Min) @ IC= -1.5 A ·Complement to Type BD675 ·Minimum Lot-to...
Features CTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -30mA VBE(on) Base-Emitter On Voltage IC= -1.5A...

Datasheet PDF File BD676 Datasheet

BD676   BD676   BD676  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map