| Part Number | BD539D |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Complement to Type BD540D ·Minimum Lot-... |
| Features |
er Transistor
BD539D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A
VCE(...
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| Datasheet |
 BD539D Datasheet
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