| Part Number | BD539B |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Complement to Type BD540B ·Minimum Lot-t... |
| Features |
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A
VCE(sat)-2 Coll...
|
| Datasheet |
 BD539B Datasheet
|
