| Part Number | BD142 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Low Collector Saturation Voltage ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL... |
| Features |
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA; IB=0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(on) Base-Emitter On Voltage
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| Datasheet |
 BD142 Datasheet
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