| Part Number | 8N80 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Static Drain-Source On-Resistance : RDS(on) = 1.25Ω(Max) @ ID= 4A ·Drain Current –ID=8.0A@ TC=25℃ ·Fast Switching Speed ·100% avalanche tested ·M... |
| Features |
el Mosfet Transistor
INCHANGE Semiconductor
8N80
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA MIN TYP MAX UNI... |
| Datasheet |
 8N80 Datasheet
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