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3DD880

INCHANGE
Part Number 3DD880
Manufacturer INCHANGE
Title NPN Transistor
Description ·DC Current Gain -hFE = 60-300@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) ·Minimum Lot-to-Lot variations for robust de...
Features CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V ICBO Collector Cutoff Current VCB= 60V ; IE= 0 IEBO Emit...

Datasheet PDF File 3DD880 Datasheet

3DD880   3DD880   3DD880  




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