| Part Number | 2SD998 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SB778 ·Minimum Lot-to-Lot variations for r... |
| Features |
ONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
120
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A
2.5
V
VBE(on)
Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IC= 5A ; VCE= 5...
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| Datasheet |
 2SD998 Datasheet
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