| Part Number | 2SD911 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High Current Capability ·Good Linearity of hFE ·High Reliability ·Wide Area of Safe Op... |
| Features |
NDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB...
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| Datasheet |
 2SD911 Datasheet
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