| Part Number | 2SD868 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 2A ·Built-in Dam... |
| Features |
ess otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VEBO
Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.6A
ICBO
Collecto...
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| Datasheet |
 2SD868 Datasheet
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