| Part Number | 2SD857 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB762 ·Minimum... |
| Features |
Saturation Voltage IC= 4A; IB= 0.4A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
ICES
Collector Cutoff Current
VCE= 60V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current ...
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| Datasheet |
 2SD857 Datasheet
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