| Part Number | 2SD855 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB760 ·Minimum... |
| Features |
r Saturation Voltage IC= 1A; IB= 0.125A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 1V
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
ICES
Collector Cutoff Current
VCE= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Curre...
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| Datasheet |
 2SD855 Datasheet
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