| Part Number | 2SD849 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 3A ·Minimum Lot-to-Lot variations for ... |
| Features |
turation Voltage IC= 3A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 750V; IE= 0 VCB= 1500V; IE= 0
hFE
DC Current Gain
IC= 3A; VCE= 10V
tf
Fall Time
tstg
Storage Time
IC= 3A, IBend= 1...
|
| Datasheet |
 2SD849 Datasheet
|
