Part Number | 2SD817 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low collector saturation voltage ·Wide area of safe operation ·With TO-3 Package ·Minimum Lot-to-Lot... |
Features |
n Voltage
IE= 1mA; IC= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.2A; IB= 0.3A
MIN MAX UNIT
6
V
600
V
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.2A; IB= 0.3...
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Datasheet | 2SD817 Datasheet |