| Part Number | 2SD811 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 900V (Min) ·High Switching Speed ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust devi... |
| Features |
Voltage
CONDITIONS IE= 1mA; IC= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
ICBO
Collector Cutoff Curre...
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| Datasheet |
 2SD811 Datasheet
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