| Part Number | 2SD807 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low collector saturation voltage ·With TO-3 Package ·Minimum Lot-to-Lot variations for robust device... |
| Features |
kdown Voltage
IE= 1mA; IC= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4.5A; IB= 2A
ICBO
Collector Cutoff Current
V...
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| Datasheet |
 2SD807 Datasheet
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