| Part Number | 2SD768 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Vo... |
| Features |
C=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA, RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA, IC= 0
VCE(sat)-1★ Collector-Emitter Saturation Voltage IC= 3A, IB= 6mA...
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| Datasheet |
 2SD768 Datasheet
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