| Part Number | 2SD727 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB691 ·Minimum... |
| Features |
IN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
80
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
130
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
5
V
VCE(sat) Collector-Emitter Satura...
|
| Datasheet |
 2SD727 Datasheet
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