Part Number | 2SD687 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min) ·Low Collector-Emitter Saturation Vol... |
Features |
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage IC= 2A,IB= 4mA
VBE(sat)) Base-Emitter Saturation Voltage
IC= 2A,IB= 4mA
ICBO
Collector Cutoff Current
VCB= 60V, IE= 0
IEBO
Emitter Cu...
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Datasheet | 2SD687 Datasheet |