| Part Number | 2SD676 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·High Power Dissipation- : PC= 125W(Max)@TC=25℃ ·Complement to Type 2SB656 ·Minimum Lo... |
| Features |
-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 140V; IE= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-...
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| Datasheet |
 2SD676 Datasheet
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