| Part Number | 2SD669 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector Current-IC= 1.5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·... |
| Features |
TIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 1mA ; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50...
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| Datasheet |
 2SD669 Datasheet
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