| Part Number | 2SD613 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 85V(Min) ·Complement to Type 2SB633 ·Minimum Lot-to-Lot variations for robust device performance... |
| Features |
R)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB...
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| Datasheet |
 2SD613 Datasheet
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